|
|||||
|
|
Surface activation using oxygen and nitrogen radical for Ge-Si Avalanche photodiode integration |
|
| Authors: | Ki Yeol Byun Isabelle FerainJohn Hayes Ran Yu Farzan Gity Cindy Colinge |
| Affiliation: | a Tyndall National Institute, University College Cork, Lee Maltings, Prospect Row, Cork, Ireland b Department of Microelectronics, University College Cork, Cork, Ireland c Department of Electrical and Electronics Engineering, University College Cork, Cork, Ireland |
| Abstract: | In this work, an alternative method for producing the single crystalline Ge-Si Avalanche photodiodes (APD) with low thermal budget was investigated. Structural and electrical investigations show that low temperature Ge to Si wafer bonding can be used to achieve successful APD integration. Based on the surface chemistry of the Ge layer, the buried interfaces were investigated using high resolution transmission electron microscopy as a function of surface activation after low temperature annealing at 200 and 300 °C. The hetero-interface was characterized by measuring forward and reverse currents. |
| Keywords: | Surface activation Ge to Si wafer bonding Avalanche photodiodes |
| 本文献已被 ScienceDirect 等数据库收录！ | |