Millimeter-Wave Reflective-Type Phase Shifter in CMOS Technology

The design and measurement of a compact, wide-band reflective-type phase shifter in 90 nm CMOS technology in V-band frequency is presented. This phase shifter has a fractional bandwidth of 26% and an average insertion loss of 6 dB over all phase states. The chip area is only 0.08 mm $^{2}$. Measurement results show that the developed phase shifter provides 90$^{circ}$ continuous phase shift over the frequency range of 50–65 GHz. The measured return loss is greater than 12 dB at 50 GHz. The output power is linear up to at least 4 dBm input power.