氧氩比对磁控溅射ZnO薄膜结构及光致发光性能的影响

采用射频反应磁控溅射法以不同的氧氩比在玻璃衬底上制备了ZnO薄膜,并对薄膜进行了退火处理;利用X射线衍射仪（XRD）和原子力显微镜（AFM）分别对薄膜的物相组成和表面形貌进行了分析,利用荧光分光光度计对ZnO薄膜的室温光致发光（PL）谱进行了测试。结果表明：当氧氩气体积比为7∶5时,所制备的ZnO薄膜晶粒细小均匀,薄膜结晶质量最好;ZnO薄膜具有紫光、蓝光和绿光三个发光峰,随着氧氩比的增加,蓝光的发射强度增强,而紫光和绿光的发射强度先增强后减弱,当氧氩气体积比为7∶5时紫光和绿光的发射强度最强。

Effects of O_2/Ar Ratios on the Structure and Photoluminescence of ZnO Thin Films Prepared by Magnetron Sputtering

ZnO thin films were deposited on glass substrates by the reactive radio-frequency magnetron sputtering with different O2/Ar ratios.The phase compositions and morphology of the ZnO thin films were analyzed by XRD and AFM.The room-temperature photoluminescence（PL） of ZnO films were measured by fluorescence photometer.The results show that when the O2/Ar ratio was 7∶5,the prepared ZnO thin film had the best crystallization quality with fine and homogeneous grain structure.The violet,blue and green peaks were observed on the PL spectra.With the increase of O2/Ar ratio,the blue emission was enhanced,while the violet and green emission was increased first and then decrease,and when the O2/Ar ratio was 7∶5,the violet and green emission intensity was the strongest.