Pore Propagation Directions in P+ Porous Silicon

A comparative study is presented on the pore propagation directions of porous silicon layers (PSL) formed on p⁺-type substrates of different orientations. PSLs were formed on plain (0 0 1) and (1 1 1) silicon wafers as well as on structured (0 0 1) wafers containing facets of various orientations. During anodization, regular pores follow the 0 0 1 direction on the (0 0 1) planes. While on the (1 1 1) planes fewer regular pores develop and seemingly propagate closely to the 1 1 1 direction. These results indicate that the pores propagate perpendicular to the surface i.e. along the field lines when the surface orientation is either (0 0 1) or (1 1 1).When the silicon surface provided (1 1 0) orientation (Chuang, Collins, and Smith, 1989), or its position is in between the (0 0 1) and (1 1 1) planes then the pores do not propagate perpendicular to the surface but along the 0 0 1 direction.All the phenomena exhibited might be explained by presuming that during formation, the pores propagate along the 1 0 0 directions, and that those 1 0 0 directions are preferred which are closely to the field lines. In PSLs formed on (0 0 1) surfaces the field lines and the 0 0 1 crystallographic direction are coincident. However, in the (1 1 1) oriented wafer where three equally probable 1 0 0 directions exist around the field lines, more irregular structure of PSLs will develop.