|
|||||
|
|
Calculation of Direct Tunneling Current through Ultra-Thin Gate Oxides Using Complex Band Models For SiO2 |
|
| Authors: | Atsushi Sakai Akihiro Ishida Shigeyasu Uno Yoshinari Kamakura Masato Morifuji Kenji Taniguchi |
| Affiliation: | (1) Department of Electronics and Information Systems, Osaka University, Osaka, 565-0871, Japan;(2) Department of Electronic Engineering, Osaka University, 2–1 Yamada–oka, Suita, Osaka, 565-0871, Japan;(3) Department of Electronics and Information Systems, Osaka University, Osaka, 565-0871, Japan |
| Abstract: | We report the calculation of gate leakage currents through the ultra-thin gate oxides (2.6–3.4 nm) in MOSFETs. We simulate J-V characteristics for the direct tunneling of valence electrons and inversion layer holes, which are measured using a charge separation technique. A two-band model is employed to express the complex band structure of the gate oxide, and its validity is discussed by calculating the complex band structure of  -cristobalite based on the second nearest neighbor sp3s* tight-binding scheme. |
| Keywords: | gate leakage current direct tunneling MOSFET two-band model complex band structure tight-binding scheme |
| 本文献已被 SpringerLink 等数据库收录！ | |