Characteristics of AlGaAs/GaAs quantum-well delta-doped channel FET(QUADFET) |
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| Authors: | Hong W.P. Zrenner A. Kim O.H. Harbison J. Florez L. Derosa F. |
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| Affiliation: | Bellcore, Red Bank, NJ; |
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| Abstract: | The transport properties of a two-dimensional electron gas in Al 0.3Ga0.7As/GaAs quantum-well delta-doped heterostructures are studied. Electron energy subbands in the quantum well were calculated by a self-consistent method. The FETs having a gate length of 1.3 μm showed a transconductance as high as 340 mS/mm. The FETs also showed a broad plateau of transconductance around its peak, which is not typical in MODFETs |
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