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Thin tantalum-silicon-oxygen/tantalum-silicon-nitrogen films as high-efficiency humidity diffusion barriers for solar cell encapsulation |
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| Authors: | H Heuer C Wenzel R Hübner ZL Zhang JW Bartha |
| Affiliation: | a Institut für Halbleiter-und Mikrosystemtechnik (IHM) Technische Universität Dresden, Helmholtzstrasse 10, 01062 Dresden, Germany b Zentrum für Sonnenenergie-und Wasserstoff-Forschung (ZSW) Industriestrasse 6, 70565 Stuttgart, Germany c Leibniz Institut für Festkörper-und Werkstoffforschung Dresden (IFW) Helmholtzstrasse 20, 01069, Dresden, Germany d Max-Planck-Gesellschaft für Metallforschung (MPI) Heisenbergstrasse 3, 70569 Stuttgart, Germany |
| Abstract: | Flexible thin-film solar cells require flexible encapsulation to protect the copper-indium-2 selenide (CIS) absorber layer from humidity and aggressive environmental influences. Tantalum-silicon-based diffusion barriers are currently a favorite material to prevent future semiconductor devices from copper diffusion. In this work tantalum-silicon-nitrogen (Ta-Si-N) and tantalum-silicon-oxygen (Ta-Si-O) films were investigated and optimized for thin-film solar cell encapsulation of next-generation flexible solar modules.CIS solar modules were coated with tantalum-based barrier layers. The performance of the thin-film barrier encapsulation was determined by measuring the remaining module efficiency after a 1000 h accelerated aging test. A significantly enhanced stability against humidity diffusion in comparison to non-encapsulated modules was reached with a reactively sputtered thin-film system consisting of 250 nm Ta-Si-O and 15 nm Ta-Si-N. |
| Keywords: | Diffusion barrier humidity encapsulation Ta-Si-O Ta-Si-N |
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