Composition, surface morphology and electrical characteristics of Al2O3-TiO2 nanolaminates and AlTiO films on silicon |
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| Authors: | V Mikhelashvili G Eisenstein |
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| Affiliation: | Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 3200, Israel |
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| Abstract: | We propose and demonstrate Metal-Oxide-Semiconductor structures comprising Al2O3-TiO2 nanolaminate and AlTiO films. Composition, structural and electrical characteristics were studied in detail and compared to TiO2 thin film-based structures. All dielectric films were evaporated using an electron beam gun (EBG) system on unheated p-Si substrate without adding O2. MOS structures were investigated in detail before and after annealing at up to 950 °C in O2 and N2 + O2 environments. The nanolaminate films remain in an amorphous state after annealing at 950 °C. The smallest quantum mechanical corrected equivalent oxide thickness measured was ∼1.37 nm. A large reduction of the leakage current density to 1.8 × 10− 8 A/cm2 at an electric field of 2 MV/cm was achieved by the annealing process. |
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| Keywords: | Thin dielectric films Electron beam gun deposition Chemical and structural properties Electrical characterization |
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