Annealing and oxidation mechanism of evaporated zinc thin films from zinc oxide powder

Zinc oxide (ZnO) thin films were deposited by thermal evaporation of a high quality ZnO powder; the obtained films were then oxidized in the air. We have systematically investigated the influence of annealing temperature ranged from 100 to 400 °C on the films composition and structural and optical properties by using Rutherford Back Scattering (RBS) analysis, X-ray Diffraction (XRD) and UV-Visible transmission respectively. The as grown films exhibit a hexagonal single phase of Zn with no preferential orientation and contain 28% oxygen. With an increase in the annealing temperature the oxygen content is enhanced to the detriment of Zn; samples were totally oxidized at 300 °C and the films are converted to stoichiometric ZnO material. However, in situ XRD pattern analysis shows that the oxidation starts at 250 °C. From the XRD results of annealed Zn samples under an electrical field we inferred that the oxidation mechanism is achieved by the ionization of oxygen atom at the film surface and subsequently followed by the diffusion of the produced ions in the film network.