Experimental study of the organic light emitting diode with a p-type silicon anode |
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| Authors: | G.L. Ma G.Z. Ran B.R. Zhang L. Dai G.G. Qin |
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| Affiliation: | a School of Physics and State Key Lab for Mesoscopic Physics, Peking University, Beijing 100871, China
b International Center for Materials Physics, Academia Sinica, Shenyang 110015, China |
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| Abstract: | We have fabricated and studied an organic light emitting diode (OLED) with a p-type silicon anode and a SiO2 buffer layer between the anode and the organic layers which emits light from a semitransparent top Yb/Au cathode. The luminance of the OLED is up to 5600 cd/m2 at 17 V and 1800 mA/cm2, the current efficiency is 0.31 cd/A. Both its luminance and current efficiency are much higher than those of the OLEDs with silicon as the anodes reported previously. The enhancement of the luminance and efficiency can be attributed to an improved balance between the hole- and electron-injection through two efficient ways: 1) restraining the hole-injection by inserting an ultra-thin SiO2 buffer layer between the Si anode and the organic layers; and 2) enhancing the electron-injection by using a low work function, low optical reflectance and absorption semitransparent Yb/Au cathode. |
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| Keywords: | 78.60.Fi 78.66.Qn 73.61.Ph 72.20.Jv 73.20.At 72.80.Le 73.40.Lq |
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