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High-performance polycrystalline silicon thin-film transistors with oxide-nitride-oxide gate dielectric and multiple nanowire channels |
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| Authors: | Shih-Ching Chen Po-Tsun Liu CC Tsai Chen-Hsin Lien |
| Affiliation: | a Institute of Electronics Engineering, National Tsing Hua University, Hsin-Chu, 300, Taiwan, ROC b Department of Physics and Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan, ROC c Department of Photonics and Display Institute, National Chiao Tung University, Hsin-Chu, 300, Taiwan, ROC d Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70 Lien-hai Rd., Kaohsiung, 300, Taiwan, ROC e Department of Engineering and System Science, National Tsing-Hua University, Hsin-Chu, 300, Taiwan, ROC |
| Abstract: | This work presents a method to enhance the performance of polycrystalline silicon thin film transistors (poly-Si TFTs) by using an oxide-nitride-oxide (ONO) gate dielectric and the multiple nanowire channels structure. Experimental results indicate that the performance of the device was enhanced by using the ONO multilayer, because the ONO gate dielectric constant is increased compared to the conventional oxide gate dielectric. Additionally, the TFTs with a ten nanowire channel structure (NW-TFTs) have superior electrical characteristics compared to other TFTs. This is because a structure with more corners and a shorter radius has better gate control due to the corner effect. |
| Keywords: | Poly-Si TFTs Oxide-nitride-oxide Nanowire |
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