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Application of the low dielectric methyl-silsesquiazane (MSZ) as a passivation layer on TFT-LCD |
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| Authors: | Ta-Shan Chang Po-Tsun Liu CY Chiang Feng-Sheng Yeh |
| Affiliation: | a Institute of Electronics Engineering, National Tsing Hua University, Hsin-Chu, 300, Taiwan, R.O.C. b Department of Physics and Institute of Electro-Optical Engineering, National Sun Yat-Sen University, Kaohsiung, 804, Taiwan, R.O.C. c Department of Photonics and Display Institute, National Chiao Tung University, Hsin-Chu, 300, Taiwan, R.O.C. d Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, 70 Lien-hai Rd., Kaohsiung, 300, Taiwan, R.O.C. e National Nano Device Laboratory, 1001-1 Ta-Hsueh Rd., Hsin-Chu, 300, Taiwan, R.O.C. |
| Abstract: | In this study a low-k material, methyl-silsesquiazane (MSZ) has been investigated as a passivation dielectric layer for thin-film transistor (TFT) arrays. Compared with the conventional nitride film (k ∼ 7), the MSZ passivation layer exhibits a low residual stress and low dielectric constant (k ∼ 2.6) which lowers the RC delay in a device. The high transmittance and good planarization characteristics of a low-k MSZ film enhance the brightness and aperture ratio of thin-film transistors liquid crystal displays (TFT-LCDs). |
| Keywords: | TFTs Low-k MSZ Passivation layer |
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