Atomic layer deposition and post-deposition annealing of PbTiO3 thin films |
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Authors: | Jenni Harjuoja Anne Kosola Matti Putkonen Lauri Niinistö |
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Affiliation: | Laboratory of Inorganic and Analytical Chemistry, Helsinki University of Technology, P.O. Box 6100, FIN-02015 Espoo, Finland |
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Abstract: | Lead titanate thin films were deposited by atomic layer deposition on Si(100) using Ph4Pb and Ti(O-i-Pr)4 as metal precursors and O3 and H2O as oxygen sources. The influence of the Ti : Pb precursor pulsing ratio on the film growth, stoichiometry and quality was studied at two different temperatures, i.e. 250 and 300 °C. Uniform and stoichiometric films were obtained using a Ti : Pb precursor pulsing ratio of 1 : 10 at 250 °C or 1 : 28 at 300 °C. The as-deposited films were amorphous but the crystalline PbTiO3 phase was obtained by rapid thermal annealing at 600-900 °C both in N2 and O2 ambient. Thin PbTiO3 films were visually uniform and roughness values for as-deposited and annealed films were observed by atomic force microscopy. |
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Keywords: | 81 15 Gh 77 84 -s 68 55 Jk |
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