Geant4模拟质子入射InP产生的位移损伤

磷化铟(InP)作为重要的第二代半导体材料，禁带宽度大，电子漂移速度快，抗辐照性能比Si,GaAs好，可作为制备空间飞行器上电学器件的备选材料。随着半导体器件的尺寸纳米化，空间环境中低能质子辐照元件所导致的位移损伤成为影响元件电学性能的主要因素之一。本文使用Geant4模拟得到低能质子入射InP产生的初级撞出原子(PKA)种类及占比和不同能量质子的非电离能量损失(NIEL)的深度分布。结果表明：质子俘获和核反应的概率随质子能量的增加而增加，进而使弹性碰撞产生的反冲原子In,P的占比减少，其他反冲原子占比增加；NIEL峰值随质子能量的增加而降低，且NIEL峰有向前移动的趋势，即随着质子能量增加，位移损伤严重区域逐渐由材料末端移至材料表面。

Geant4 simulation of displacement damage induced by proton irradiation in InP

As an important second-generation semiconductor material, indium phosphide has wide bandgap, fast electron drift and better radiation resistance than Si and GaAs. It can be used as an alternative material for the preparation of electrical devices on space vehicles. With the nano-size of semiconductor devices, the displacement damage caused by low-energy proton irradiation in space environment is one of the main factors affecting the electrical properties of components. In this paper, the types and proportions of Primary Knock-on Atom(PKA) produced by low energy protons irradiation and the depth distribution of Non-Ionizing Energy Loss(NIEL) of protons with different energies are obtained by Geant4 simulation. The results show that the probability of proton capture and nuclear reaction increases with the increase of proton energy, which decreases the proportion of recoil atoms In and P and enhances other recoil atoms in elastic collision. The NIEL peak tends to move forward in depth of the bulk material with the increase of proton energy, which means the area of serious displacement damage gradually shifts from the end of the material to the surface of the material.