一种感光栅GaN基高电子迁移率晶体管紫外探测器

利用GaN基高电子迁移率晶体管(HEMT)的栅控特性和铁电体的光伏效应机制,制备了一种新型(光敏感层/HEMT)光探测器件。主要研究了复合薄膜和溅射气氛对光敏感薄膜的光伏性能以及对新型感光栅极探测器的光探测能力的影响。结果表明,PZT/ZnO复合薄膜的量子效率峰值达到14.55%;有氧氛围下制备的PZT薄膜剩余极化强度达到52.31μC/cm²;沉积PZT/ZnO复合薄膜的探测器在紫外光照下相比于暗场下的源漏饱和电流最多增加12.64mA。可见,所制备的新型探测器对紫外光具有优良的探测能力,为光探测的研究提供了新的方向。

Study on GaN-based High Electron Mobility Transistor Ultraviolet Detector

By using the gate control characteristics of GaN high electron mobility transistor(HEMT)and the photovoltaic effect mechanism of ferroelectrics,a new type of(photosensitive layer/HEMT)photo-detecting device was prepared.In this paper,mainly studied is the influence of film types and sputtering atmosphere on the photovoltaic performance of light-sensitive films and the light detection ability of the new photosensitive grid detector.The results show that the peak quantum efficiency of the PZT/ZnO composite film reaches 14.55%,and the residual polarization intensity of the PZT film prepared by passing oxygen during sputtering reaches 52.31μC/cm2.The saturation current of the detector deposited with PZT/ZnO composite film under UV light increased by 12.64 mA at most compared with that of the dark field source.It can be concluded that the new detector has an excellent ability to detect ultraviolet light,and it provides a new direction for the study of light detection.