Low frequency noise and technology induced mechanical stress in MOSFETs

A detailed experimental investigation of low frequency noise as a function of technology-induced mechanical stress in MOSFET devices is presented. Both n- and p-MOSFETs have been studied. Strain in the channel region is obtained by the Shallow Trench Isolation (STI) technique. An increasing of 1/f noise intensity when compressive mechanical stress increases has been detected in p-channel transistor. A critical discussion of this experimental finding has been proposed in the scenario of advanced generation CMOS technologies.