Low frequency noise and technology induced mechanical stress in MOSFETs |
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Authors: | Paolo Fantini Giorgio Ferrari |
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Affiliation: | aSTMicroelectronics, via Olivetti 2, Agrate Brianza 20041, Italy;bPolitecnico di Milano, Dip. Di Elettronica e Informazione, P.za L.da Vinci 32, Milano 20133, Italy |
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Abstract: | A detailed experimental investigation of low frequency noise as a function of technology-induced mechanical stress in MOSFET devices is presented. Both n- and p-MOSFETs have been studied. Strain in the channel region is obtained by the Shallow Trench Isolation (STI) technique. An increasing of 1/f noise intensity when compressive mechanical stress increases has been detected in p-channel transistor. A critical discussion of this experimental finding has been proposed in the scenario of advanced generation CMOS technologies. |
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