| 直拉法硅表面层熔体流动所遵循的线性规律 |
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| 引用本文： | 李英春,秦福,万群.直拉法硅表面层熔体流动所遵循的线性规律[J].上海有色金属,1989(1). |
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| 作者姓名： | 李英春 秦福 万群 |
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| 作者单位： | 北京有色金属研究总院，北京有色金属研究总院，北京有色金属研究总院 |
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| 摘 要： | 本文定量地研究了硅自由表面层熔体的流动规律,用大量实验数据确立了自由表面层熔体径向流动速度与熔体纵横比(D/H)值的线性对应关系。根据这个关系可以成功地解释和处理硅单晶生长过程中的许多相关问题。
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| 关 键 词： | 硅单晶 直拉法 晶体生长 半导体 |
Linear Law Governing the Flow of Silicon Melt in the Surface Layer during Czochralski Process |
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| Li Yingchun,Qin Fu,Wan Qun.Linear Law Governing the Flow of Silicon Melt in the Surface Layer during Czochralski Process[J].Shanghai Nonferrous Metals,1989(1). |
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| Authors: | Li Yingchun Qin Fu Wan Qun |
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| Affiliation: | Beijing General Research Institute of Non-ferrous Metals |
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| Abstract: | The law governing the flow of silicon melt in the surface layer is quantitatively studied with the linear relation between the radial flow speed of silicon melt in the surface layer and the value of D/H defined by a large quantity of experiment data. Many problems involved in the growing process of silicon single crystals can be explained and settled in accordance with the relation defined. |
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| Keywords: | Silicon single crystals Czochralski Process Growth of crystals Semiconductors |
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