| Si基HgCdTe材料的电学特性研究 |
| |
| 引用本文： | 魏青竹 吴俊 巫艳 陈路 于梅芳 王伟强 傅祥良 何力. Si基HgCdTe材料的电学特性研究[J]. 激光与红外, 2007, 37(B09): 919-923 |
| |
| 作者姓名： | 魏青竹 吴俊 巫艳 陈路 于梅芳 王伟强 傅祥良 何力 |
| |
| 作者单位： | [1]中国科学院上海技术物理研究所材料器件中心,上海200083 [2]中国科学院研究生院,北京100039 |
| |
| 摘 要： | 文章研究了Si基分子束外延HgCdTe原生材料、P型退火材料和N型退火材料的霍耳参数、少子寿命等材料电学特性。研究发现，晶格失配导致Si基HgCdTe材料原生材料和N型退火材料迁移率低；Si基原生HgCdTe材料属于高补偿材料，但高补偿性并非材料的固有特性，通过P型退火可使材料变为低补偿材料，迁移率得到提高。采用分子束外延方法制备的3in Si基HgCdTe材料电学性能与GaAs基HgCdTe材料相比，性能还有待提高。改进分子束外延生长工艺提高HgCdTe质量，从而进一步提高迁移率，是Si基外延研究的关键。
|
| 关 键 词： | Si基 HgCdTe 电学参数 少子寿命 变温霍耳 分子束外延 |
| 文章编号： | 1001-5078（2007）增刊-0919-05 |
| 修稿时间： | 2007-06-29 |
Study of Si-substrate HgCdTe Electrical Properties |
| |
| WEI Qing-zhu ,WU Jun, WU Yan, CHEN Lu, YU Mei-fang, WANG Wei-qiang , FU Xiang-liang, HE Li. Study of Si-substrate HgCdTe Electrical Properties[J]. Laser & Infrared, 2007, 37(B09): 919-923 |
| |
| Authors: | WEI Qing-zhu WU Jun WU Yan CHEN Lu YU Mei-fang WANG Wei-qiang FU Xiang-liang HE Li |
| |
| Affiliation: | Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
| |
| Abstract: | The research of Si/HgCdTe electrical properties through Hall and minority lifetime measurement of in-situ grown material, P-type annealed material and N-type annealed material grown by MBE is reported. Compensated property of in-situ grown Si/HgCdTe material was obtained, but the compensation was not the intrinsic character of material. By P-type annealing, Si/HgCdTe material can be converted to non-compensated material, and increased mobility was acquired. Compared with in-situ grown GaAs/HgCdTe material, Si/HgCdTe material is pending raise to a certain extent. Optimizing MBE growth technology thus improving HgCdTe quality and then increasing mobility is the crucial part of Si-sub HgCdTe. |
| |
| Keywords: | Si-substrate HgCdTe electrical properties minority lifetime Hall MBE |
| 本文献已被 维普 等数据库收录！ |
