一种提高SiC MOSFET在高开关速率下栅极电压稳定性的驱动电路

高开关速率且栅极电压稳定的驱动是SiC MOSFET高频工作、进而实现功率变换系统小型化和轻量化的关键技术之一.针对如何在高开关速率下稳定驱动SiC MOSFET,并实现可靠的短路保护,根据栅源电压干扰的传导特点,基于辅助器件的跨导增益构建负反馈控制回路,提出一种SiC MOSFET栅极驱动,进而研究揭示该驱动的短路保...

Drive Circuit for Enhancing the Gate Voltage Stability of SiC MOSFET at High Switching Rate

Driving with a high switching rate and a stable gate voltage is one of the key technologies for SiC MOSFET to operate at high frequency and achieve miniaturization and a lightweight power conversion system. In order to realize a stable gate drive of SiC MOSFET at a high switching rate, as well as a reliable short-circuit protection, this paper constructs a negative feedback control loop based on the transconductance gain of the auxiliary devices ac-cording to the conduction characteristics of gate-source voltage interference, proposes a gate drive of SiC MOSFET, and then studies and reveals the short-circuit protection strategy of this drive. Firstly, the gate drive circuit is constructed based on transconductance gain negative feedback and its working principle is analyzed. Secondly, the crosstalk suppression ability and short circuit protection characteristics of the drive are investigated. Final-ly, the feasibility of the gate drive circuit based on transconductance gain negative feedback and its effectiveness in crosstalk suppression and short circuit protection are proved by experiments.