基于热阻抗模型的三相逆变器功率器件结温监测方法

绝缘栅双极型晶体管IGBT(insulated gate bipolar transistor)模块结温的精确计算是开展功率器件主动热管理、寿命预测的前提和关键.IGBT模块的导通压降和开关损耗均受温度影响,在计算损耗时应根据温度对结果进行修正.基于空间矢量脉宽调制SVPWM(space vector pulse wi...

Junction Temperature Monitoring Method for Three-phase Inverter Power Device Based on Thermal Impedance Model

The accurate calculation of junction temperature of insulated gate bipolar transistor(IGBT) modules is the premise and key of active thermal management and life prediction of power devices. The on-state voltage drop and switching loss of IGBT modules are affected by temperature, so the results should be corrected according to the temperature when calculating the losses. Based on a two-level three-phase inverter modulated by space vector pulse width modulation (SVPWM), this paper uses the thermal impedance model prediction method to monitor the junction temperature of IGBT modules, and establishes the junction temperature calculation model. And the comparison between the calculated results with and without temperature correction and the thermal simulation results of PLECS shows that the temperature correction is helpful to improve the accuracy of junction temperature calculation. Finally, a small power experiment was carried out on a two-level three-phase inverter, and the junction temperature of the IGBT power module was measured by the thermistor method. The error rate between the calculation results and the experimental results is less than 2%, which verifies the accuracy and feasibility of the junction temperature calculation model.