Inductively coupled plasma reactive ion etching of ZnO films in HBr/Ar plasma |
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Authors: | Su Ryun Min |
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Affiliation: | Department of Chemical Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Republic of Korea |
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Abstract: | The etching characteristics of ZnO thin films were examined in an HBr/Ar gas mix using an inductively coupled plasma reactive ion etching system. The etch rate and etch profile were systematically investigated as a function of gas concentration. In addition, the effects of etch parameters such as coil rf power, dc-bias voltage, and gas pressure were studied. As the HBr concentration increased, the etch rate of the ZnO films gradually decreased while the etch profile was improved. Surface analyses including X-ray photoelectron spectroscopy and atomic force microscopy were employed to elucidate the etch mechanism of ZnO in an HBr/Ar chemistry. |
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Keywords: | Zinc oxide High density plasma Dry etching HBr |
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