脉冲功率电路参数对RSD开关预充时间的影响研究

文章介绍了高功率半导体脉冲功率开关-反向开关晶体管（Reversely Switched Dynistor,RSD）的工作原理,分析了RSD脉冲功率电路的特性。由磁开关的电压电流,得到了磁开关的动态电感与电流的量化曲线,在MATLAB仿真平台,分别建立了磁开关动态电感模型、RSD脉冲功率电路模型。计算了主回路元件参数对RSD开关的预充时间TR的影响。计算结果表明,主回路电阻负载在0.01～1Ω变化时,TR变化很小,主回路电感和1Ω以上的主回路电阻对TR影响较明显,计算结果与实验结果最大误差为5%,表明通过低压试验结果的计算,可较准确地预测高压试验的TR。

Research on the Effect of Parameter of Pulse Power Circuit on Triggering Time of RSD

Switch principle of high-power semiconductor pulse power switch Reversely Switched Dynistor（RSD） is introduced.Characteristics of pulse power circuit based on RSD are analyzed.Data curve of dynamic inductance and current of magnetic switch is computed based on voltage and current curve of magnetic switch,and dynamic magnetic switch inductance model based on data table is built in M file.Pulse power circuit model which include magnetic switch dynamic inductance model and RSD physical model is built on MATLAB simulation environment.The Effect of parameter of pulse power circuit on triggering time of RSD are computed.Triggering time changes little with resistance load in 0.01～1 Ω,but influence obviously with inductance load and resistance load above 1Ω.The result of calculation and experimental result accord with very well.Triggering time in high voltage experiment can be from experiment results of triggering time of low voltage experiment.