Infinitely high etch selectivity during CH4/H2/Ar inductively coupled plasma (ICP) etching of indium tin oxide (ITO) with photoresist mask |
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Authors: | D.Y. Kim |
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Affiliation: | School of Advanced Materials Science & Engineering and Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, Kyunggi-do 440-746, South Korea |
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Abstract: | Under certain conditions during ITO etching using CH4/H2/Ar inductively coupled plasmas, the etch rate selectivity of ITO to photoresist (PR) was infinitely high because the ITO films continued to be etched, but a net deposition of the α-C:H layer occurred on the top of the PR. Analyses of plasmas and etched ITO surfaces suggested that the continued consumption of the carbon and hydrogen in the deposited α-C:H layer by their chemical reaction with In and Sn atoms in the ITO resulting in the generation of volatile metal-organic etch products and by the ion-enhanced removal of the α-C:H layer presumably play important roles in determining the ITO etch rate and selectivity. |
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Keywords: | ITO Plasma etching Infinite etch selectivity Inductively coupled plasma |
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