Characterization of electron irradiated GaN n-p diode |
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Authors: | Dong Uk Lee Byung Cheol Lee |
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Affiliation: | a Quantum-Function Spinics Laboratory and Department of Physics, Hanyang University, Seoul 133-791, Republic of Korea b Laboratory for Quantum Optics, Korea Atomic Energy Research Institute, Daejeon 305-353, Republic of Korea c Electronics and Telecommunication Research Institute, Daejeon 305-700, Republic of Korea |
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Abstract: | Electron-beam irradiated GaN n+-p diodes were characterized by deep level transient spectroscopy (DLTS) and optical responsivity measurements. The GaN n+-p diode structures were grown by metal organic chemical vapor deposition technique, and the electron irradiation was done by the energies of 1 MeV and 2 MeV with dose of 1 × 1016 cm− 2. In DLTS measurement, the defect states of Ec − 0.36 eV and Ec − 0.44 eV in the electron irradiated diodes appeared newly. The optical responsivity of GaN n+-p diode was characterized in ultra-violet region, and then the maximum optical responsivity at 350 nm was decreased after electron-beam irradiation. |
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Keywords: | Electron-beam irradiation GaN n+-p diode Photo detector Deep level transient spectroscopy |
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