Hydrogen reduction in GaAsN thin films by flow rate modulated chemical beam epitaxy |
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Authors: | K. Saito K. Nishimura H. Suzuki Y. Ohshita M. Yamaguchi |
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Affiliation: | Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan |
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Abstract: | The amount of residual H in the GaAsN film grown by chemical beam epitaxy (CBE) can be decreased by flow rate modulation growth. Many H atoms in the films grown by CBE exist as N-H or N-H2 structures. Although a higher growth temperature was required for decreasing the H concentration ([H]), it caused a decrease in the N concentration ([N]). A reduction in [H] while keeping [N] constant was necessary. By providing an intermittent supply of Ga source while continuously supplying As and N sources, [H] effectively decreased in comparison with the [H] value in the film grown at the same temperature by conventional CBE without reducing [N]. |
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Keywords: | Chemical beam epitaxy Flow rate modulated chemical beam epitaxy Gallium arsenide nitride Residual hydrogen |
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