| 红外用超薄PtSi膜的一种制备新方法 |
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| 引用本文： | 刘爽,宁永功,陈艾.红外用超薄PtSi膜的一种制备新方法[J].真空科学与技术学报,2000,20(4):293-295. |
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| 作者姓名： | 刘爽 宁永功 陈艾 |
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| 作者单位： | 电子科技大学信息材料工程学院!成都610054(刘爽，宁永功，陈艾)，重庆光电技术研究所!重庆400061(李华高，杨家德) |
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| 摘 要： | 膜厚制约着PtSi红外探测器的量子效率。本文介绍了一种根据固相反应理论 ,在 1 0 - 4 Pa量级真空度条件下 ,采用真空退火、化学腐蚀手段制备超薄 (约 5 5nm)PtSi膜的新工艺方法 ,并用XRD ,XPS对所制备的样品进行了物相分析。该方法所需温度低 ,时间短 ,制得薄膜均匀性好
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| 关 键 词： | 红外成像制导 超薄PtSi膜 真空退火 化学腐蚀 |
| 修稿时间： | 1998-08-12 |
Growth of Ultrathin PtSi Films for Infrared Applications |
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| Liu Shuang,Ning Yonggong,Chen Ai.Growth of Ultrathin PtSi Films for Infrared Applications[J].JOurnal of Vacuum Science and Technology,2000,20(4):293-295. |
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| Authors: | Liu Shuang Ning Yonggong Chen Ai |
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| Abstract: | The film thickness creates a bottleneck in the quantum efficiency of PtSi film infrared detector.A novel technique has been developed to grow ultrathin PtSi films.Based on solid reaction theory,an ultrathin PtSi film with a thickness of 5 5 nm was grown by vacuum annealing followed by chemical etching at 10 -4 Pa.The films were studied with X ray diffraction and X ray photoelectron spectroscopy.The results show that the new technique has several advantages over the conventional one,such as low reaction temperature,short reaction time,and fairly uniform PtSi films. |
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| Keywords: | IR imaging guiding Ultrathin PtSi film Vacuum annealing Chemical etching |
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