| CUSP磁场对直拉硅单晶氧浓度分布影响的数值模拟 |
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| 引用本文： | 常麟,周旗钢,戴小林,鲁进军,卢立延.CUSP磁场对直拉硅单晶氧浓度分布影响的数值模拟[J].稀有金属,2011,35(6). |
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| 作者姓名： | 常麟 周旗钢 戴小林 鲁进军 卢立延 |
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| 作者单位： | 北京有色金属研究总院有研半导体材料股份有限公司,北京,100088 |
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| 摘 要： | 利用有限元分析软件对φ300mm直拉硅单晶生长过程进行模拟,分析了保持CUSP磁场对称面与熔体坩埚界面交点处的径向分量不变的情况下,硅单晶中氧浓度分别随CUSP磁场通电线圈距离、通电线圈半径的变化规律.随着通电线圈距离和半径的增大,晶体熔体固液界面氧浓度均逐渐降低.随着通电线圈距离和半径的增大,硅熔体径向磁场强度逐渐增大,对坩埚底部熔体向晶体熔体固液界面处对流的抑制作用加强,固液界面下方熔体轴向流速减小,使得从坩埚底部运输上来的富氧熔体减少,继而固液界面处的氧浓度降低.随着线圈距离和半径的增大,为保持所需磁场强度,施加电流也逐渐增大,从而能耗增大,与增大通电线圈距离相比,增大通电线圈半径所需的电流较大.通过实验,将CUSP磁场对单晶中氧浓度分布影响的数值模拟结果与实际晶体生长进行了对比,实验结果验证了数值模拟的结果.
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| 关 键 词： | 直拉硅单晶 CUSP磁场 氧浓度 有限元分析 数值模拟 |
Numerical Simulation of CUSP Magnetic Field on Oxygen Concentration Distribution in CZ-Si Crystal Growth |
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| Chang Lin,Zhou Qigang,Dai Xiaolin,Lu Jinjun,Lu Liyan.Numerical Simulation of CUSP Magnetic Field on Oxygen Concentration Distribution in CZ-Si Crystal Growth[J].Chinese Journal of Rare Metals,2011,35(6). |
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| Authors: | Chang Lin Zhou Qigang Dai Xiaolin Lu Jinjun Lu Liyan |
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| Affiliation: | Chang Lin,Zhou Qigang,Dai Xiaolin,Lu Jinjun,Lu Liyan (Grinm Semiconductor Materials Co.,Ltd,General Research Institute for Non-Ferrous Metals,Beijing 100088,China) |
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| Abstract: | Finite element analysis software femag-CZ was used for the simulation of the effect of CUSP magnetic field on the oxygen concentration in CZ-Si crystal growth.Keeping the CUSP radial component in the intersection of CUSP and the crucible melt interface constant,the law of oxygen concentration distribution along melt/crystal interface was studied.With the increase of the distance and radius of CUSP current coils,oxygen concentration in the m-c interface decreased gradually.Keeping the CUSP radial component i... |
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| Keywords: | CZ Si crystal CUSP magnetic field oxygen concentration finite element analysis numerical analysis |
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