| 垂直结构GaN基LED的侧壁优化技术 |
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| 引用本文： | 黄亚军,刘志强,伊晓燕,王良臣,王军喜,李晋闽.垂直结构GaN基LED的侧壁优化技术[J].半导体技术,2011,36(3):206-209. |
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| 作者姓名： | 黄亚军 刘志强 伊晓燕 王良臣 王军喜 李晋闽 |
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| 作者单位： | 中科院半导体所照明研发中心,北京,100083;中科院半导体所照明研发中心,北京,100083;中科院半导体所照明研发中心,北京,100083;中科院半导体所照明研发中心,北京,100083;中科院半导体所照明研发中心,北京,100083;中科院半导体所照明研发中心,北京,100083 |
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| 摘 要： | 为了提升垂直结构LED提取效率,针对器件侧壁出光的研究越发引起研究人员的关注。由于GaN的高折射率,大部分有源区发出的光线将被限制在GaN层内横向传输。对不同刻蚀倾角侧面的光提取效率进行分析模拟,模拟结果显示,LED的提取效率可以通过侧壁倾斜角度的优化得以提升。实验结果表明,特定侧壁倾角器件的提取效率相比较垂直侧壁提高了18.75%,电致发光光谱测试(EL)结果表明,实验结论与理论计算值基本吻合。本结论对垂直结构GaN基LED器件的优化设计与性能提升有重要指导意义。
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| 关 键 词： | GaN 垂直结构LED 提取效率 双层掩膜 刻蚀 |
Fabrication of Vertical GaN-Based LEDs with Oblique Side Walls Structure |
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| Huang Yajun,Liu Zhiqiang,Yi Xiaoyan,Wang Liangehen,Wang Junxi,Li Jinmin.Fabrication of Vertical GaN-Based LEDs with Oblique Side Walls Structure[J].Semiconductor Technology,2011,36(3):206-209. |
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| Authors: | Huang Yajun Liu Zhiqiang Yi Xiaoyan Wang Liangehen Wang Junxi Li Jinmin |
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| Affiliation: | Huang Yajun,Liu Zhiqiang,Yi Xiaoyan,Wang Liangchen,Wang Junxi,Li Jinmin(R&D Center for Semiconductor Lighting,Chinese Academy of Sciences,Beijing 100083,China) |
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| Abstract: | In order to improve the extraction efficiency of vertical structure LEDs,more and more attention has been paid on the light extraction from sidewalls.Because of the high refractive index of GaN,most light was trapped in the active layer in rectangular LEDs.Simulation and experiment results show that the extraction efficiency of LEDs can be improved by varying the angle of side walls.The vertical LEDs with oblique side walls were fabricated and the extraction efficiency was improved by 18.75%. |
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| Keywords: | GaN |
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