Crystallization and electrical characteristics of Ge1Cu2Te3 films for phase change random access memory

Phase change random access memory (PCRAM) requires an advanced phase change material to lower its power consumption and to enhance its data retention and endurance abilities. The present work investigated the crystallization behaviors and electrical properties of Ge₁Cu₂Te₃ compound films with a low melting point of about 500 °C for PCRAM application. Sputter-deposited Ge₁Cu₂Te₃ amorphous films showed a high crystallization temperature of about 250 °C. The Ge₁Cu₂Te₃ amorphous film showed an electrical resistance decrease of over 10²-fold and exhibited a small increase in thickness of 2.0% upon crystallization. The Ge₁Cu₂Te₃ memory devices showed reversible switching behaviors and exhibited a 10% lower power consumption for the reset operation than the conventional Ge₂Sb₂Te₅ memory devices. Therefore, the Ge₁Cu₂Te₃ compound is a promising phase change material for PCRAM application.