Formation of (Ga,Mn)As nanowires and study of their magnetic properties |
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| Authors: | A D Bouravleuv G E Cirlin V V Romanov N T Bagraev E S Brilinskaya N A Lebedeva S V Novikov H Lipsanen V G Dubrovskii |
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| Affiliation: | 1.Ioffe Physical Technical Institute,Russian Academy of Sciences,St. Petersburg,Russia;2.St. Petersburg Academic University, Nanotechnology Research and Education Center,Russian Academy of Sciences,St. Petersburg,Russia;3.Aalto University,Aalto,Finland;4.Institute for Analytical Instrumentation,Russian Academy of Sciences,St. Petersburg,Russia;5.St. Petersburg State Polytechnical University,St. Petersburg,Russia |
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| Abstract: | The molecular-beam epitaxy technique is used to synthesize arrays of (Ga,Mn)As nanowire crystals on a GaAs (111)B surface
in the growth-temperature range 480–680°C. It is established that the formation of (Ga,Mn)As nanowires can be described in
the context of a vapor-liquid-crystal mechanism. It is shown that the growth of (Ga,Mn)As nanowires must occur in conditions
stabilized with respect to Ga. It is found that the field and temperature dependences of the static magnetic susceptibility
for samples produced at the temperature 660°C exhibit paramagnetic behavior. |
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