InGaP/InGaAs HFET with high current density and high cut-offfrequencies |
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| Authors: | Geiger D Mittermeier E Dickmann J Geng C Winterhof R Scholz F Kohn E |
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| Affiliation: | Dept. of Electron Devices & Circuits, Ulm Univ.; |
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| Abstract: | Doped channel pseudomorphic In0.49Ga0.51P/In 0.20Ga0.80As/GaAs heterostructure field effect transistors have been fabricated on GaAs substrate with 0.25 μm T-gates and self-aligned ohmic contact enhancement. By introducing the channel doping and reducing the series resistances, a high current density of 500 mA/mm is obtained in combination with cut off frequencies of fT=68 GHz and fmax=160 GHz. The channel doping did not affect the RF-performance of the device essentially, which is additionally reflected in noise figures below 1.0 dB with an associated gain of 14.5 dB at 12 GHz |
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