氮化物半导体电子器件的若干研究进展

近年来，氮化物半导体电子器件和材料研究有了重大的进展。在国家自然科学基金资助下，西安电子科技大学、北京大学和中科院微电子所完成了国家自然科学基金重点项目《GaN宽禁带微电子材料和器件重大基础问题研究》。致力于通过氮化物电子材料和器件的基础物理机理研究提高GaN电子材料的结晶质量和电学性能、发展新结构GaN异质结材料研究，获得高性能的GaN HEMT微波功率器件。本文主要介绍该项目在GaN微波功率HEMT和新型高k栅介质MOS-HEMT、InAlN/GaN材料的生长和物性缺陷分析以及HEMT器件研制、GaN异质结的量子输运和自旋性质研究以及GaN材料高场输运性质和耿氏器件等几个方面取得的研究进展。

Progress in Group III nitride semiconductor electronic devices

Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and high-electric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources.