| 衬底表面处理对原子层沉积方式生长铂金薄膜的影响 |
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| 引用本文： | 葛亮,胡成,朱志炜,张卫,吴东平,张世理. 衬底表面处理对原子层沉积方式生长铂金薄膜的影响[J]. 半导体学报, 2012, 33(8): 083003-5 |
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| 作者姓名： | 葛亮 胡成 朱志炜 张卫 吴东平 张世理 |
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| 基金项目： | 国家自然科学基金项目（面上项目，重点项目，重大项目） |
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| 摘 要： | 在这篇文章中,我们利用原子层沉积(ALD)的方式在硅衬底上生长铂金(反应源是(CH3C5H4Pt(CH3)3)和氧气)。将经过氢氟酸处理和氧气处理的两种类型硅衬底进行生长对比实验来探究衬底表面处理对原子层沉积方式生长铂金薄膜的影响。相对于经氧化处理的硅衬底来说,在氢氟酸处理的硅衬底上淀积铂金薄膜有较长的滞后时间且生长过程不同。此外,即使在原子层沉积铂金薄膜实验之前利用氢氟酸处理硅衬底以去除天然氧化层,淀积实验完成后在铂金和硅衬底界面处仍有一层中间氧化层。文章解释了导致这种差异性的原因。
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| 关 键 词： | 原子层沉积 表面制备 Pt薄膜 甲基环戊二烯基 Si衬底 HF处理 ALD 氧化物 |
| 修稿时间： | 2012-04-10 |
Influence of surface preparation on atomic layer deposition of Pt films |
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| Ge Liang,Hu Cheng,Zhu Zhiwei,Zhang Wei,Wu Dongping and Zhang Shili. Influence of surface preparation on atomic layer deposition of Pt films[J]. Chinese Journal of Semiconductors, 2012, 33(8): 083003-5 |
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| Authors: | Ge Liang Hu Cheng Zhu Zhiwei Zhang Wei Wu Dongping Zhang Shili |
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| Affiliation: | 1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
2. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China;Solid-State Electronics, the Angstr(o)m Laboratory, Uppsala University, Box 534, 75121 Uppsala, Sweden |
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| Abstract: | We report Pt deposition on a Si substrate by means of atomic layer deposition (ALD) using (methylcyclopentadienyl) trimethylplatinum (CH3C5H4Pt(CH3)3) and O2. Silicon substrates with both HF-last and oxide-last surface treatments are employed to investigate the influence of surface preparation on Pt-ALD. A significantly longer incubation time and less homogeneity are observed for Pt growth on the HF-last substrate compared to the oxide-last substrate. An interfacial oxide layer at the Pt-Si interface is found inevitable even with HF treatment of the Si substrate immediately prior to ALD processing. A plausible explanation to the observed difference of Pt-ALD is discussed. |
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| Keywords: | Pt atomic layer deposition surface treatment interfacial oxide layer |
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