| 溅射压力对制备a-GaAs1-xNx 薄膜光学常数的影响 |
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| 引用本文： | 贾宝山,王云华,周路,白端元,乔忠良,高欣,薄报学.溅射压力对制备a-GaAs1-xNx 薄膜光学常数的影响[J].半导体学报,2012,33(8):083002-4. |
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| 作者姓名： | 贾宝山 王云华 周路 白端元 乔忠良 高欣 薄报学 |
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| 基金项目： | Proiect suooorted bv the National Natural Science Foundation of China （Nos. 61177019, 61176048）. |
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| 摘 要： | 采用反应磁控溅射法在室温条件下制备了a-GaAs1-xNx 薄膜。实验测定了薄膜厚度、氮含量、载流子浓度和光学透过率及并研究了其随溅射压的变化。系统研究了溅射压对所制备薄膜的光学带隙、折射率和色散参数的影响。所制备的薄膜为直接带隙材料，利用Cauchy和Wemple模型能够很好地拟合所制备薄膜的折射率色散曲线。
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| 关 键 词： | 反应磁控溅射法 薄膜 压力 光学常数 色散关系 载流子浓度 玻璃基板 光学带隙 |
| 收稿时间： | 1/17/2012 3:02:06 PM |
| 修稿时间： | 3/7/2012 5:43:32 AM |
Influence of sputtering pressure on optical constants of a-GaAs1-xNx thin films |
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| Jia Baoshan,Wang Yunhu,Zhou Lu,Bai Duanyuan,Qiao Zhongliang,Gao Xin and Bo Baoxue.Influence of sputtering pressure on optical constants of a-GaAs1-xNx thin films[J].Chinese Journal of Semiconductors,2012,33(8):083002-4. |
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| Authors: | Jia Baoshan Wang Yunhu Zhou Lu Bai Duanyuan Qiao Zhongliang Gao Xin and Bo Baoxue |
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| Affiliation: | State Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology,Changchun 130022, China |
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| Abstract: | Amorphous GaAs1-xNx (a-GaAs1-xNx) thin films have been deposited at room temperature by a reactive magnetron sputtering technique on glass substrates with different sputtering pressures. The thickness, nitrogen content, carrier concentration and transmittance of the as-deposited films were determined experimentally. The influence of sputtering pressure on the optical band gap, refractive index and dispersion parameters (Eo, Ed) has been investigated. An analysis of the absorption coefficient revealed a direct optical transition characterizing the as-deposited films. The refractive index dispersions of the as-deposited a-GaAs1-xNx films fitted well to the Cauchy dispersion relation and the Wemple model. |
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| Keywords: | a-GaAs1-xNx thin films sputtering deposition optical constants |
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