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Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE |
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| Authors: | J W Johnson A G Baca R D Briggs R J Shul J R Wendt C Monier F Ren S J Pearton A M Dabiran A M Wowchack C J Polley P P Chow |
| Affiliation: | a Department of Chemical Engineering, University of Florida, P.O. Box 116005, Gainesville, FL 32611, USA b Sandia National Laboratories, Albuquerque, NM 87185, USA c Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA d SVT Associates, Eden Prairie, MN 55344, USA |
| Abstract: | The DC performance of AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy was investigated for gate lengths in the range 0.1–1.2 μm. On 0.25 μm gate length devices we obtained 40 VDS operation with >50 mA peak ID. The peak drain current density was 0.44 A/mm for 100 μm gate width devices with 1.2 μm gate lengths. The extrinsic transconductance (gm) decreased with both gate length and gate width and was  75 mS/mm for all gate widths for 0.25 μm devices. E-beam written gates typically produced a slightly lower Schottky barrier height than optically patterned gates. |
| Keywords: | GaN AlGaN HEMT MBE SEM Barrier height |
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