Improvement of a-Si solar cell properties by using SnO2:F TCO films coated with an ultra-thin TiO2 layer prepared by APCVD |
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Authors: | M. Kambe M. Fukawa N. Taneda K. Sato |
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Affiliation: | aResearch Center, Asahi Glass Co., Ltd. 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221-8755, Japan |
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Abstract: | TiO2-overcoated SnO2:F transparent conductive oxide films were prepared by atmospheric pressure chemical vapor deposition (APCVD) and an effect of TiO2 layer thickness on a-Si solar cell properties was investigated. The optical properties and the structure of the TiO2 films were evaluated by spectroscopic ellipsometry and X-ray difractometry. a-Si thin film solar cells were fabricated on the SnO2:F films over-coated with TiO2 films of various thicknesses (1.0, 1.5 and 2.0 nm) and I–V characteristics of these cells were measured under 1 sun (100 mW/cm2 AM-1.5) illumination. It was found that the TiO2 film deposited by APCVD has a refractive index of 2.4 at 550 nm and anatase crystal structure. The conversion efficiency of the a-Si solar cell fabricated on the 2.0 nm TiO2-overcoated SnO2:F film increased by 3%, which is mainly attributed to an increase in open circuit voltage (Voc) of 30 mV. |
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Keywords: | Transparent conductive oxide Titanium oxide Open circuit voltage |
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