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Conduction electrons bound to magneto-donors and magneto-acceptors in GaAs/GaAlAs quantum wells
Authors:P. Vicente   A. Raymond   M. Kamal Saadi   B. Couzinet   M. Kubisa   W. Zawadzki  B. Etienne
Affiliation:

a Groupe d'Etudes des Semiconducteurs, URA CNRS 357, Université Montpellier II, 34095, Montpellier, France

b Institute of Physics, Polish Academy of Sciences, 02668, Warsaw, Poland

c Laboratoire de Microstructures et de Microélectronique, CNRS, 98220, Bagneux, France

Abstract:Interband photoluminescence from asymmetric modulation-doped GaAs---GaAlAs quantum wells in the presence of a magnetic field has been investigated. The free-carrier Landau level excitations as well as transitions between magneto-donor and free hole states have been observed. Experiments with tilted magnetic field provide strong evidence for the existence of conduction electrons bound to ionized magneto-acceptors, characterized by discrete energies above the conduction band Landau levels. The observations are compared with the theory.
Keywords:
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