Enhanced defects recombination in ion irradiated SiC

Point defects induced in SiC by ion irradiation show a recombination at temperatures as low as 320 K and this process is enhanced after running current density ranging from 80 to 120 A/cm².Ion irradiation induces in SiC the formation of different defect levels and low-temperature annealing changes their concentration. Some levels (S₀, S_x and S₂) show a recombination and simultaneously a new level (S₁) is formed.An enhanced recombination of defects is besides observed after running current in the diode at room temperature. The carriers introduction reduces the S₂ trap concentration, while the remaining levels are not modified. The recombination is negligible up to a current density of 50 A/cm² and increases at higher current density. The enhanced recombination of the S₂ trap occurs at 300 K, which otherwise requires a 400 K annealing temperature. The process can be related to the electron-hole recombination at the associated defect.