Color center creation in LiF crystals irradiated with Xe, Kr and N ions: Dependence on fluence and beam current density |
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| Authors: | AK Dauletbekova AT Akilbekov MV Zdorovets AF Vassil’eva DA Akilbekova |
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| Affiliation: | Department of Radio Electronics and Technical Physics of Physical-Technical Faculty of L.N. Gumilyov Eurasian National University, 5 Munaitpassov str., 010008 Astana, Kazakhstan |
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| Abstract: | Single LiF crystals were irradiated with Xe (195 MeV), Kr (117 MeV), and N (18 MeV) ions. Using absorption spectroscopy, color center creation was analyzed as a function of the ion energy loss, fluence, and flux. The concentration of single F centers and F2 centers versus fluence and flux exhibits a nonlinear evolution with saturation at higher fluences. For LiF irradiated with N ions at high fluence, the concentration of F centers is proportional to the cube root of the flux indicating the strong interaction of primary hole centers. Macroscopic hillocks were observed in all irradiated LiF crystals by atomic force microscopy. |
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| Keywords: | LiF Color centers Ion tracks Hillocks |
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