Introduction of conductivity on non-conducting polyaniline by low-energy proton implantation |
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Authors: | Seiko Nakagawa Nobuaki Ohta |
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Affiliation: | a Tokyo Metropolitan Industrial Technology Research Institute, 2-11-1 Fukazawa, Setagaya-ku, Tokyo 158-0081, Japan b Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima 739-8527, Japan |
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Abstract: | The semiconductor characteristics of a non-conducting polyaniline pellet can be modified by implantation of low-energy protons, that is, the resistivity became less than 50 Ω cm by proton doping at the fluence rate and fluence of 4 × 1011 ions/cm2/s and 1 × 1015 ions/cm2, respectively. The resistivity increased with the increasing fluence rate of the protons. FT/IR spectra have shown that a new band resulted from the appearance of N+-H due to the proton implantation. |
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Keywords: | Proton Implantation Conductivity Polyaniline |
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