| 晶体硅中缺陷和沉淀的红外扫描仪研究 |
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| 引用本文： | 席珍强. 晶体硅中缺陷和沉淀的红外扫描仪研究[J]. 半导体技术, 2005, 30(7): 18-20 |
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| 作者姓名： | 席珍强 |
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| 作者单位： | 浙江大学硅材料国家重点实验室,杭州,310027 |
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| 摘 要： | 晶体硅中的杂质或缺陷会显著地影响各种硅基器件的性能.通过红外扫描仪观察晶体硅中的晶界、位错和不同金属沉淀的分布和形貌,并分析其相关信息.与传统研究手段相比,红外扫描仪不仅可以直接观察到体内的缺陷或沉淀,而且不会破坏样品.
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| 关 键 词： | 硅 红外扫描仪:缺陷 沉淀 |
| 文章编号： | 1003-353X(2005)07-0018-03 |
| 修稿时间： | 2004-12-10 |
Scanning Infrared Microscopy Investigation of Defects and Precipitates in Crystalline Silicon |
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| XI Zhen-qiang. Scanning Infrared Microscopy Investigation of Defects and Precipitates in Crystalline Silicon[J]. Semiconductor Technology, 2005, 30(7): 18-20 |
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| Authors: | XI Zhen-qiang |
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| Abstract: | The defects or precipitates in crystalline silicon may influence the properties of different silicon-base devices noticeably. The distribution or the morphology of grain boundaries, dislocations and precipitates in crystalline silicon were observed by scanning infrared microscopy (SIRM), and much useful information was obtained. In comparison with traditional research tools, SIRM has advantages of direct observation of defects or precipitates in crystalline silicon and no destruction to specimens. |
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| Keywords: | silicon scanning infrared microscopy defect precipitation |
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