| 离子注入对插入损耗和隔离度影响的研究 |
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| 引用本文： | 吴忆茹,侯飞凡,张俊龙,郝志.离子注入对插入损耗和隔离度影响的研究[J].电子科技,2016,29(6):107. |
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| 作者姓名： | 吴忆茹 侯飞凡 张俊龙 郝志 |
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| 作者单位： | (1. 上海理工大学 光电信息与计算机工程学院，上海 210094；;
2. 中芯国际集成电路制造（上海）有限公司 研发部，上海 201203) |
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| 摘 要： | 基于一个典型的013 μm绝缘体上硅，射频开关电路工艺流程，分析了离子掺杂工艺流程对射频开关导通电阻Ron和关断电容Coff的影响。通过N型MOS管的浅掺杂注入后热退火温度和N型MOS管浅掺杂能量的分批实验，证实了退火温度可影响射频开关的导通电阻和关断电容。进一步实验结果显示，浅掺杂注入的砷（As）和磷（P）注入的剂量是主导因素，各自对导通电阻和关断电容值的影响均为线性且趋势相反，为基于013 μm SOI的射频开关性能的优化提供了依据。
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| 关 键 词： | SOI 射频开关 插入损耗 隔离度 掺杂能量 剂量 |
Rearch of Implant affect Insertion Loss and Isolation |
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| WU Yiru,HOU Feifan,ZHANG Junlong,HAO Zhi.Rearch of Implant affect Insertion Loss and Isolation[J].Electronic Science and Technology,2016,29(6):107. |
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| Authors: | WU Yiru HOU Feifan ZHANG Junlong HAO Zhi |
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| Affiliation: | (1. Optical Electrical and Computer Engineering ,University of Shanghai of Science and Technology, Shanghai 210094, China；2. Semiconductor Manufacturing International (Shanghai) |
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| Abstract: | Based on a typical 013 μm RF Switch SOI technics flow, analyze the effect of NLDD (NMOS Lightly Dropped Drain) technics to switch of Ron and Coff. Based on the experiment result of NMOS NLDD RTA and further discuss to NMOS NLDD IMP, proved RTA can effect Ron and Coff. The result shows dose of As and P acted as main effector to the research, present a regular linear trend to Ron and Coff which share an inverse tendency, thus providing a reference of RF switch optimizing method based on 013 μm SOI technic. |
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| Keywords: | SOI RF switch insertion loss isolation doping energy dose |
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