| GaAs粒子探测器的抗辐照特性研究 |
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| 引用本文： | 邵传芬,史常忻.GaAs粒子探测器的抗辐照特性研究[J].核技术,1995,18(6):374-376. |
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| 作者姓名： | 邵传芬 史常忻 |
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| 作者单位： | 上海交通大学微电子技术研究所 |
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| 摘 要： | 报道了一种面积为９ｍｍ＾２的ＧａＡｓ肖特基势垒粒子探测器，其反向耐压高于４００Ｖ，反向漏电流低于１２５ｎＲ（ＶＲ〈－１５０Ｖ）。器件经受能量为３ＭｅＶ，剂量为５００ｋＧｙ的电子辐照后，反向漏电流为２７０ｎＡ（ＶＲ＝－１５０Ｖ）。说明在高能物理和核物理中很有应用前途。
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| 关 键 词： | 粒子探测器 抗辐照特性 肖特基势垒 砷化镓 |
Investigation on radiation-hardness of GaAs particle detectors |
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| Shao Chuanfen,Shi Changxin.Investigation on radiation-hardness of GaAs particle detectors[J].Nuclear Techniques,1995,18(6):374-376. |
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| Authors: | Shao Chuanfen Shi Changxin |
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| Abstract: | The radiation hardness of GaAs Shottky barrier particle detectors has been tested. The leakage current at reverse voltage VR<-150V is lower than 125nA. After a 3MeV electron radiation of 500kGy, the leakage current is changed to 270nA at VR=-150V.It is a promising detector in both high energy and nuclear physics. |
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| Keywords: | Particle detector GaAs |
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