High-Strength Porous Silicon Carbide Ceramics by an Oxidation-Bonding Technique |
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Authors: | Jihong She Jian-Feng Yang Naoki Kondo Tatsuki Ohji Shuzo Kanzaki Zhen-Yan Deng |
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Affiliation: | Synergy Materials Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Nagoya 463–8687, Japan;Synergy Ceramics Laboratory, Fine Ceramics Research Association, Nagoya 463–8687, Japan |
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Abstract: | Porous silicon carbide (SiC) ceramics were fabricated by an oxidation-bonding process in which the powder compacts are heated in air so that SiC particles are bonded to each other by oxidation-derived SiO2 glass. Because of the crystallization of amorphous SiO2 glass into cristobalite during sintering, the fracture strength of oxidation-bonded SiC ceramics can be retained to a relatively high level at elevated temperatures. It has been shown that the mechanical strength is strongly affected by particle size. When 0.6 μm SiC powders were used, a high strength of 185 MPa was achieved at a porosity of ∼31%. Moreover, oxidation-bonded SiC ceramics were observed to exhibit an excellent oxidation resistance. |
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Keywords: | silicon carbide porous materials cristobalite |
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