Front- and backside investigations of thermal and electronic properties of semiconducting devices |
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| Authors: | G. B. M. Fiege W. Schade M. Palaniappan V. Ng J. C. H. Phang L. J. Balk |
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| Affiliation: | 1. Lehrstuhl für Elektronik, Bergische Universität Wuppertal, 42097 Wuppertal, Germany;2. Centre for IC Failure Analysis and Reliability, National University of Singapore, Singapore;1. Movement Disorders Section, Department of Neurology, Hannover Medical School, Hannover, Germany;2. Institute of Toxicology, Hannover Medical School, Hannover, Germany;3. Merz Pharmaceuticals GmbH, Frankfurt/Main, Germany;1. Department of Civil and Environmental Engineering, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong;2. School of Automobile and Traffic Engineering, Hefei University of Technology, Hefei, Anhui, PR China;3. College of Transportation Engineering, Tongji University, Shanghai, PR China;1. Department of Medicinal and Applied Chemistry, College of Life Sciences, Kaohsiung Medical University (KMU), Kaohsiung City, 807, Taiwan;2. Department of Chemical Engineering, Indian Institute of Technology Madras, Chennai, 600036, India;3. Department of Chemistry, School of Advanced Sciences, Vellore Institute of Technology, Vellore, 632014, India;4. Department of Botany and Microbiology, College of Science, King Saud University, P.O. Box 2455, Riyadh, 11451, Saudi Arabia;5. Innovative Green Product Synthesis and Renewable Environment Development Research Group, Faculty of Environment and Labour Safety, Ton Duc Thang University, Ho Chi Minh City, Viet Nam;6. Research Center for Environmental Medicine, College of Medicine, Kaohsiung Medical University (KMU), Kaohsiung City, 807, Taiwan;7. Department of Medical Research, Kaohsiung Medical University Hospital (KMUH), Kaohsiung City, 807, Taiwan;1. School of Chemistry and Chemical Engineering, Harbin Institute of Technology, No.92 Xidazhi St, Nangang District, Harbin 150001, China;2. Grasslands Research Centre, AgResearch Ltd., Tennent Drive, No.11 Dairy Farm Road, Palmerston North 4442, New Zealand;1. Professor of Operations Management and Sustainability, UC Business School, University of Canterbury, New Zealand;2. Chair of Innovation Economics, Technische Universität Berlin & Fraunhofer Institute for Systems and Innovation ISI Research, Germany;3. Professor in Management, Monash Business School, Monash University, Australia |
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| Abstract: | Shrinking feature sizes of electronic devices are leading to an increase of the internal electrical fields resulting in an increased hot electron generation. Consequently, the investigation of the resulting electrical device degradation and breakdown mechanisms gain in significance. A powerful tool for these investigations is the photon emission microscope (PEM). A disadvantage of this technique, however, is the inability to image radiative recombination processes which are taking place underneath metallization layers. In this paper, we will show that PEM investigations from the backside overcome problems of failure localization caused by opaque metal contacts. A further scope of this work is to compare the information which is obtained by collecting the emitted light with thermal properties like failure induced hot spots inside a device. This thermal characterization is carried out with a scanning thermal microscope (SThM), which is used for the localization of failures in integrated devices and for backside measurements on thinned substrates. |
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