A circuit-compatible analytical device model for ballistic nanowire transistors

Silicon nanowire transistors (SNWTs) have attracted broad attention as a promising device structure for future integrated circuits. Silicon nanowires with a diameter as small as 2 nm and having high carrier mobility have been achieved. Consequently, to develop TCAD tools for SNWT design and to model SNWT for circuit-level simulations have become increasingly important. This paper presents a circuit-compatible closed-form analytical model for ballistic SNWTs. Both the current–voltage (I–V) and capacitance–voltage (C–V) characteristics are modeled in terms of device parameters and terminal voltages. Such a model can be efficiently used in a conventional circuit simulator like SPICE to facilitate transistor-level simulation of large-scale nanowire or mixed nanowire-CMOS circuits and systems.