Catalytic Growth of Large-Scale GaN Nanowires |
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| Authors: | Jinhua Chen and Chengshan Xue |
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| Affiliation: | (1) Department of Mechanical Engineering, Zhenjiang Vocational College of Mechanical & Electrical Technology, No. 132 Xuefu Road, Zhenjiang, 212016, China;(2) Institute of Semiconductors, College of Physics and Electronics, Shandong Normal University, No. 88 East Culture Road, Ji’nan, 250014, China |
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| Abstract: | A novel lanthanon seed was employed as the catalyst for the growth of GaN nanowires. Large-scale GaN nanowires have been synthesized
successfully through ammoniating Ga2O3/Tb films sputtered on Si(111) substrates. Scanning electron microscopy, x-ray diffraction, high-resolution transmission electron
microscopy, and Fourier transform infrared spectroscopy were used to characterize the samples. The results demonstrate that
the nanowires are single-crystal hexagonal wurtzite GaN. The growth mechanism of GaN nanowires is also discussed. |
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