Fully ion-implanted abrupt pn junction on semi-insulating InP |
| |
Authors: | Wang K.-W. Cheng C.L. Zima S.M. |
| |
Affiliation: | AT&T Bell Laboratories, Murray Hill, USA; |
| |
Abstract: | We report a fully ion-implanted pn junction using Si for n-implant and P/Be co-implant for a shallow p+ surface layer. C/V measurements indicate abrupt junction behaviour. Mesa diodes were fabricated and showed an ideality factor of two, small leakage current and avalanche breakdown at reverse bias greater than 40 V. |
| |
Keywords: | |
|
|