Ion-implanted resist removal using atomic hydrogen |
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Authors: | H. Horibe M. YamamotoT. Maruoka Y. GotoA. Kono I. NishiyamaS. Tagawa |
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Affiliation: | a Kanazawa Institute of Technology, 3-1 Yatsukaho, Hakusan, Ishikawa 924-0838, Japanb Daipla wintes, 1-3-26 Nagasunishidori, Amagasaki, Hyougo 660-0807, Japanc Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan |
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Abstract: | We removed B-, P-, and As-ion-implanted positive-tone novolak resists with an implantation dose of 5 × 1012 to 5 × 1015 atoms/cm2 at 70 keV, using atomic hydrogen. Though the removal rate decreased with increase in the implantation dose, all of the ion-implanted resists were removed. The rates of thickness of the surface-hardened layer/all resist layer of B, P, and As implanted resists were 0.38, 0.26, and 0.16, respectively, by SEM observation. The removal rate decreased with increasing the rate of the surface-hardened layer. The energy supplied from the ions to the resist concentrated on the surface side in the increasing order of B-P-As. |
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Keywords: | Ion-implanted resist Resist removal Atomic hydrogen Chemicals Surface-hardened layer Catalytic CVD |
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