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Light and voltage dependence of the junction transport properties of CdTe/CdS photovoltaics |
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| Authors: | D.L. Linam V.P. Singh J.C. McClure G.B. Lush X. Mathew P.J. Sebastian |
| Affiliation: | a Electrical and Computer Engineering Department, University of Texas El Paso-UTEP, El Paso, TX 79968-0520, USA;b Electrical Engineering Department, University of Kentucky, Lexington, KY 40506, USA;c Centro de Investigación en Energı́a, UNAM, Temixco, Morelos, Mexico |
| Abstract: | The J–V curve of CdTe/CdS photovoltaics does not consist of a simple superposition of a loss current and a light generated current with a considerable loss in conversion efficiency. This paper uses capacitance/voltage measurements and J–V measurements at a variety of temperatures and light levels to develop a model for this non-superposition. It was found that a light dependent tunneling mechanism dominates at low voltages. Moreover, the tunneling takes place from a trap level within the CdTe. |
| Keywords: | Cadmium telluride CdTe Solar cells Junctions Thin films Photovoltaics |
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